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ZDT6702TC

Diodes Incorporated
ZDT6702TC Preview
Diodes Incorporated
TRANS NPN/PNP DARL 60V 1.75A SM8
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Diodes Incorporated ZDT6702TC is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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ZDT6702TC

ZDT6702TC

$0.00

Product details

Introducing the ZDT6702TC BJT Array by Diodes Incorporated, a premium offering in Discrete Semiconductor Products. This sophisticated transistor array combines multiple bipolar junction transistors with closely matched parameters. The ZDT6702TC excels in applications demanding coordinated switching or amplification across several channels. Its design emphasizes thermal stability and parameter uniformity throughout the array. The product delivers high current gain with minimal variation between individual transistors. With its compact footprint, it enables high-density circuit designs without performance compromise. The ZDT6702TC features low noise operation for sensitive signal processing applications. Its robust construction withstands mechanical stress and environmental factors. This BJT Array demonstrates excellent long-term parameter stability for reliable system operation. Power supply designers value its consistent performance in voltage regulation circuits. Audio engineers utilize it for balanced amplification stages in professional equipment. Automotive electronics benefit from its durability in challenging operating conditions. The ZDT6702TC also serves critical functions in industrial control systems. Diodes Incorporated has implemented rigorous quality control measures throughout production. The component's design facilitates heat dissipation in high-power applications. Its lead-free composition meets modern environmental standards. For design engineers seeking reliable, high-performance transistor arrays, the ZDT6702TC delivers exceptional value. Explore its capabilities further by submitting an inquiry through our online portal today.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN, PNP Darlington (Dual)
  • Current - Collector (Ic) (Max): 1.75A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 1.28V @ 2mA, 1.75A
  • Current - Collector Cutoff (Max): 500nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5000 @ 500mA, 5V / 2000 @ 500mA, 5V
  • Power - Max: 2.75W
  • Frequency - Transition: 140MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-223-8
  • Supplier Device Package: SM8

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