UMC4N-7
Diodes Incorporated
Diodes Incorporated
TRANS NPN/PNP PREBIAS SOT353
$0.16
Available to order
Reference Price (USD)
3,000+
$0.16448
6,000+
$0.15503
15,000+
$0.14558
30,000+
$0.14400
Exquisite packaging
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UMC4N-7
$0.16
Product details
Explore the UMC4N-7 from Diodes Incorporated, a premium pre-biased bipolar junction transistor (BJT) array in the Discrete Semiconductor Products category, specifically Transistors - Bipolar (BJT) - Arrays, Pre-Biased. This product is designed for superior performance in amplification and switching applications, delivering unmatched reliability and efficiency. The UMC4N-7 features built-in pre-biasing, simplifying circuit design and improving functionality. Its excellent thermal properties ensure stable operation across a broad temperature range. Ideal for automotive electronics, audio systems, and power supplies, the UMC4N-7 provides consistent and precise performance. This transistor array is also commonly found in aerospace applications, security systems, and wearable devices. With high gain and low power consumption, the UMC4N-7 is perfect for energy-sensitive designs. The durable and compact construction of this BJT array makes it a cost-effective choice for various projects. To discover how the UMC4N-7 can meet your specific needs, request a quote today and our specialists will provide you with comprehensive support.
General specs
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms, 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 150mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: SOT-353
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