Shopping cart

Subtotal: $0.00

MMBT5401-7-F

Diodes Incorporated
MMBT5401-7-F Preview
Diodes Incorporated
TRANS PNP 150V 0.6A SOT23-3
$0.21
Available to order
Reference Price (USD)
3,000+
$0.03923
6,000+
$0.03450
15,000+
$0.02978
30,000+
$0.02820
75,000+
$0.02663
150,000+
$0.02400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Diodes Incorporated MMBT5401-7-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
MMBT5401-7-F

MMBT5401-7-F

$0.21

Product details

Optimize your circuit performance with the MMBT5401-7-F, a precision Bipolar Junction Transistor from Diodes Incorporated. This single BJT in the Discrete Semiconductor Products lineup delivers exceptional gain bandwidth product for high-frequency applications. The transistor's low base-emitter voltage requirement enhances energy efficiency in battery-powered devices. Its symmetrical current handling capabilities support bidirectional circuit designs when needed. The MMBT5401-7-F exhibits excellent parameter matching, crucial for differential amplifier stages. Typical implementations include sensor interfaces, signal conditioning circuits, and pulse generators. Aerospace systems, marine electronics, and scientific instrumentation benefit from this BJT's reliable operation. The component undergoes rigorous testing for parameter stability and long-term reliability. Its moisture-resistant packaging ensures performance in humid environments. Diodes Incorporated employs state-of-the-art fabrication techniques to maintain consistent quality across production runs. The MMBT5401-7-F combines cutting-edge semiconductor technology with practical design features. For detailed specifications and purchasing information, complete our online contact form to connect with a product specialist.

General specs

  • Product Status: Active
  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 600 mA
  • Voltage - Collector Emitter Breakdown (Max): 150 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3

Viewed products

onsemi

TIP42G

$0.00 (not set)
Diodes Incorporated

FMMT491QTA

$0.00 (not set)
onsemi

2SA1416S-TD-E

$0.00 (not set)
NXP Semiconductors

BC52-10PASX

$0.00 (not set)
NTE Electronics, Inc

NTE165

$0.00 (not set)
Diodes Incorporated

2DB1188R-13

$0.00 (not set)
onsemi

SBC847AWT1G

$0.00 (not set)
onsemi

MMBT3904LT1G

$0.00 (not set)
onsemi

2SA1371D

$0.00 (not set)
onsemi

2SC2911S

$0.00 (not set)
Top