MMBT3906Q-7-F
Diodes Incorporated
Diodes Incorporated
GENERAL PURPOSE TRANSISTOR SOT23
$0.03
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$0.03406
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$0.0337194
1000+
$0.0333788
1500+
$0.0330382
2000+
$0.0326976
2500+
$0.032357
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Diodes Incorporated MMBT3906Q-7-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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MMBT3906Q-7-F
$0.03
Product details
Upgrade your electronic designs with the MMBT3906Q-7-F, a high-reliability Bipolar Junction Transistor from Diodes Incorporated. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The MMBT3906Q-7-F demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Diodes Incorporated subjects each MMBT3906Q-7-F unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the MMBT3906Q-7-F delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.
General specs
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 200 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 310 mW
- Frequency - Transition: 250MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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