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MMBT123S-7-F

Diodes Incorporated
MMBT123S-7-F Preview
Diodes Incorporated
TRANS NPN 18V 1A SOT23-3
$0.33
Available to order
Reference Price (USD)
3,000+
$0.06538
6,000+
$0.05750
15,000+
$0.04963
30,000+
$0.04700
75,000+
$0.04438
150,000+
$0.04000
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Diodes Incorporated MMBT123S-7-F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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MMBT123S-7-F

MMBT123S-7-F

$0.33

Product details

The MMBT123S-7-F from Diodes Incorporated is a premium-grade Bipolar Junction Transistor designed for demanding Discrete Semiconductor Products applications. This single BJT combines high current capability with fast switching characteristics for versatile circuit implementation. Its advanced epitaxial base structure ensures uniform current distribution and thermal management. The transistor exhibits low saturation voltage, reducing power dissipation in switching applications. Engineers value the MMBT123S-7-F for its tight parameter tolerances and batch-to-batch consistency. Typical circuit implementations include class AB amplifiers, electronic switches, and voltage-controlled oscillators. Automotive electronics, power tools, and industrial control systems commonly utilize this reliable component. The MMBT123S-7-F meets stringent quality standards with comprehensive production testing and failure analysis. Its moisture sensitivity level (MSL) rating accommodates standard manufacturing processes. Diodes Incorporated supports the MMBT123S-7-F with detailed application notes and SPICE models for design simulation. For volume pricing, lead time information, or technical consultation, please submit your inquiry through our responsive online system.

General specs

  • Product Status: Obsolete
  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 18 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 300mA
  • Current - Collector Cutoff (Max): 1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 100mA, 1V
  • Power - Max: 300 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3

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