DXT13003DG-13
Diodes Incorporated
Diodes Incorporated
TRANS NPN 450V 1.3A SOT223-3
$0.18
Available to order
Reference Price (USD)
2,500+
$0.19737
5,000+
$0.18603
12,500+
$0.17469
25,000+
$0.17280
Exquisite packaging
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DXT13003DG-13
$0.18
Product details
The DXT13003DG-13 from Diodes Incorporated is a premium-grade Bipolar Junction Transistor designed for demanding Discrete Semiconductor Products applications. This single BJT combines high current capability with fast switching characteristics for versatile circuit implementation. Its advanced epitaxial base structure ensures uniform current distribution and thermal management. The transistor exhibits low saturation voltage, reducing power dissipation in switching applications. Engineers value the DXT13003DG-13 for its tight parameter tolerances and batch-to-batch consistency. Typical circuit implementations include class AB amplifiers, electronic switches, and voltage-controlled oscillators. Automotive electronics, power tools, and industrial control systems commonly utilize this reliable component. The DXT13003DG-13 meets stringent quality standards with comprehensive production testing and failure analysis. Its moisture sensitivity level (MSL) rating accommodates standard manufacturing processes. Diodes Incorporated supports the DXT13003DG-13 with detailed application notes and SPICE models for design simulation. For volume pricing, lead time information, or technical consultation, please submit your inquiry through our responsive online system.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1.3 A
- Voltage - Collector Emitter Breakdown (Max): 450 V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
- Power - Max: 700 mW
- Frequency - Transition: 4MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-3
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