DMT10H010LK3-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 68.8A TO252
$1.33
Available to order
Reference Price (USD)
2,500+
$0.60900
5,000+
$0.58205
12,500+
$0.56280
Exquisite packaging
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Diodes Incorporated DMT10H010LK3-13 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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DMT10H010LK3-13
$1.33
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 68.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2592 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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