Shopping cart

Subtotal: $0.00

DMP2006UFGQ-7

Diodes Incorporated
DMP2006UFGQ-7 Preview
Diodes Incorporated
MOSFET P-CH 20V PWRDI3333
$0.42
Available to order
Reference Price (USD)
2,000+
$0.45205
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Diodes Incorporated DMP2006UFGQ-7 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DMP2006UFGQ-7

DMP2006UFGQ-7

$0.42

Product details

Diodes Incorporated's DMP2006UFGQ-7 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The DMP2006UFGQ-7 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The DMP2006UFGQ-7 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN

Viewed products

onsemi

NVMYS1D6N04CLT1G

$0.00 (not set)
onsemi

NVMFS5C430NLWFET1G

$0.00 (not set)
Renesas

UPA2702TP-E2-AZ

$0.00 (not set)
Goford Semiconductor

G3404LL

$0.00 (not set)
Harris Corporation

RFP25N06L

$0.00 (not set)
onsemi

NTMFSC012N15MC

$0.00 (not set)
Goford Semiconductor

03N06

$0.00 (not set)
Renesas Electronics America Inc

UPA2350BT1P-E4-A

$0.00 (not set)
Goford Semiconductor

G01N20LE

$0.00 (not set)
onsemi

NVMFWS005N10MCLT1G

$0.00 (not set)
Top