DMN63D1LDW-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 60V 0.25A SOT363
$0.09
Available to order
Reference Price (USD)
3,000+
$0.09600
Exquisite packaging
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DMN63D1LDW-7
$0.09
Product details
Optimize your electronic designs with the DMN63D1LDW-7 MOSFET array from Diodes Incorporated, a standout in the Discrete Semiconductor Products category. This transistor array, part of the Transistors - FETs, MOSFETs - Arrays subcategory, delivers superior performance in power switching applications. Its compact design and high efficiency make it a preferred choice for engineers seeking reliable solutions.\n\nThe DMN63D1LDW-7 boasts features such as low gate drive requirements, high current handling capacity, and minimal switching losses. The array format provides multiple FETs in one package, streamlining PCB layout and reducing component count. Enhanced thermal management ensures stable operation even under high load conditions.\n\nApplications for the DMN63D1LDW-7 include industrial automation, renewable energy systems, and automotive electronics. In industrial automation, it drives actuators and sensors with precision. Renewable energy systems leverage its efficiency for solar inverters and wind turbine controls. Automotive electronics benefit from its durability and performance in harsh conditions.\n\nInterested in the DMN63D1LDW-7? Contact us for a quote and discover how this MOSFET array can enhance your designs. Our experts are ready to support your technical and purchasing requirements.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 250mA
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
- Power - Max: 310mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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