Shopping cart

Subtotal: $0.00

DMN2320UFB4-7B

Diodes Incorporated
DMN2320UFB4-7B Preview
Diodes Incorporated
MOSFET N-CH 20V 1A X2-DFN1006-3
$0.44
Available to order
Reference Price (USD)
10,000+
$0.14000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Diodes Incorporated DMN2320UFB4-7B is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DMN2320UFB4-7B

DMN2320UFB4-7B

$0.44

Product details

Enhance your electronic designs with the DMN2320UFB4-7B single MOSFET transistor from Diodes Incorporated, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The DMN2320UFB4-7B features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the DMN2320UFB4-7B particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the DMN2320UFB4-7B represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.89 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 520mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN

Viewed products

Infineon Technologies

IPD60R145CFD7ATMA1

$0.00 (not set)
Fairchild Semiconductor

FQP7N80

$0.00 (not set)
Diodes Incorporated

2N7002EQ-7-F

$0.00 (not set)
Nexperia USA Inc.

PSMN013-30YLC,115

$0.00 (not set)
STMicroelectronics

STL13N60M2

$0.00 (not set)
Infineon Technologies

IPU50R950CEBTMA1

$0.00 (not set)
Rectron USA

RM7N600IP

$0.00 (not set)
Taiwan Semiconductor Corporation

TSM4NB60CP ROG

$0.00 (not set)
Texas Instruments

CSD19535KTT

$0.00 (not set)
onsemi

NTD20N06-001

$0.00 (not set)
Top