DMN2014LHAB-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 9A 6-UDFN
$0.57
Available to order
Reference Price (USD)
3,000+
$0.21374
6,000+
$0.20140
15,000+
$0.18906
30,000+
$0.18042
Exquisite packaging
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DMN2014LHAB-7
$0.57
Product details
The DMN2014LHAB-7 from Diodes Incorporated is a high-reliability MOSFET array in the Discrete Semiconductor Products category, part of the Transistors - FETs, MOSFETs - Arrays subcategory. Designed for demanding applications, this product offers superior power handling and switching efficiency.\n\nKey features of the DMN2014LHAB-7 include fast switching speeds, low power dissipation, and robust thermal performance. The array format provides multiple transistors in a single package, optimizing space and improving design flexibility. Its high-quality construction ensures durability and consistent performance.\n\nThis MOSFET array is ideal for use in power tools, HVAC systems, and security equipment. Power tools benefit from its high current handling and efficiency. HVAC systems utilize its reliability for temperature and fan control. Security equipment relies on its precision for sensor and alarm systems.\n\nIntegrate the DMN2014LHAB-7 into your next project. Contact us for pricing and technical details. Our experts are here to help you find the best solutions for your applications.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A
- Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
- Power - Max: 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
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