DMN2014LHAB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-DFN2030-6
$0.18
Available to order
Reference Price (USD)
1+
$0.17685
500+
$0.1750815
1000+
$0.173313
1500+
$0.1715445
2000+
$0.169776
2500+
$0.1680075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated DMN2014LHAB-13 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
DMN2014LHAB-13
$0.18
Product details
The DMN2014LHAB-13 by Diodes Incorporated is a top-tier MOSFET array in the Discrete Semiconductor Products category, specifically designed for Transistors - FETs, MOSFETs - Arrays. This product is perfect for applications requiring high power efficiency and compact design, offering exceptional performance and reliability.\n\nKey attributes of the DMN2014LHAB-13 include minimal conduction losses, high switching speed, and superior thermal management. The array configuration allows for efficient use of PCB space while maintaining high performance. Its design ensures compatibility with a variety of driving circuits, making it highly versatile.\n\nIdeal applications include robotics, consumer electronics, and aerospace systems. In robotics, it provides precise motor control and power management. Consumer electronics benefit from its efficiency and compact size. Aerospace systems rely on its reliability under extreme conditions.\n\nEnhance your designs with the DMN2014LHAB-13. Contact us for pricing and availability details. Our experts are ready to help you find the perfect solution for your needs.
General specs
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
- Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V
- Power - Max: 800mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-UFDFN Exposed Pad
- Supplier Device Package: U-DFN2030-6 (Type B)
Viewed products