DMN2011UFDE-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 11.7A 6UDFN
$0.25
Available to order
Reference Price (USD)
1+
$0.24810
500+
$0.245619
1000+
$0.243138
1500+
$0.240657
2000+
$0.238176
2500+
$0.235695
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated DMN2011UFDE-13 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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DMN2011UFDE-13
$0.25
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 3372 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
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