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DMN10H220LQ-13

Diodes Incorporated
DMN10H220LQ-13 Preview
Diodes Incorporated
MOSFET N-CH 100V 1.6A SOT23-3
$0.07
Available to order
Reference Price (USD)
10,000+
$0.07840
Exquisite packaging
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DMN10H220LQ-13

DMN10H220LQ-13

$0.07

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Vgs (Max): ±16V
  • Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

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