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DMN1008UFDF-13

Diodes Incorporated
DMN1008UFDF-13 Preview
Diodes Incorporated
MOSFET N-CH 12V 12.2A 6UDFN
$0.52
Available to order
Reference Price (USD)
10,000+
$0.14001
30,000+
$0.12971
50,000+
$0.12542
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DMN1008UFDF-13

DMN1008UFDF-13

$0.52

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: U-DFN2020-6 (Type F)
  • Package / Case: 6-UDFN Exposed Pad

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