DMJ70H1D4SJ3
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 651V~800V TO251 TU
$1.17
Available to order
Reference Price (USD)
1+
$1.17253
500+
$1.1608047
1000+
$1.1490794
1500+
$1.1373541
2000+
$1.1256288
2500+
$1.1139035
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Diodes Incorporated DMJ70H1D4SJ3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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DMJ70H1D4SJ3
$1.17
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 273 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 78W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-251 (Type TH)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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