DGTD65T60S2PT
Diodes Incorporated
Diodes Incorporated
IGBT 600V-X TO247 TUBE 0.45K
$3.35
Available to order
Reference Price (USD)
450+
$3.88329
Exquisite packaging
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DGTD65T60S2PT
$3.35
Product details
The DGTD65T60S2PT from Diodes Incorporated is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the DGTD65T60S2PT ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the DGTD65T60S2PT for your applications request a quote today.
General specs
- Product Status: Last Time Buy
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): 180 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
- Power - Max: 428 W
- Switching Energy: 920µJ (on), 530µJ (off)
- Input Type: Standard
- Gate Charge: 95 nC
- Td (on/off) @ 25°C: 42ns/142ns
- Test Condition: 400V, 60A, 7Ohm, 15V
- Reverse Recovery Time (trr): 205 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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