DGD2103S8-13
Diodes Incorporated
Diodes Incorporated
IC GATE DRVR HALF-BRIDGE 8SO
$0.87
Available to order
Reference Price (USD)
1+
$0.87000
500+
$0.8613
1000+
$0.8526
1500+
$0.8439
2000+
$0.8352
2500+
$0.8265
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DGD2103S8-13
$0.87
Product details
The DGD2103S8-13 by Diodes Incorporated is a high-efficiency PMIC - Gate Driver designed for demanding power electronics applications. This advanced IC provides robust gate driving capability for MOSFETs, IGBTs, and wide-bandgap devices. The DGD2103S8-13 features intelligent control algorithms that optimize switching behavior for different load conditions. Its innovative design minimizes propagation delay while maintaining excellent noise immunity. The gate driver's adaptive dead-time control prevents shoot-through currents in half-bridge and full-bridge configurations. For data center power supplies, the DGD2103S8-13 enables high-efficiency power conversion with precise voltage regulation. In industrial robotics, it provides reliable control for precision motion systems. The component also excels in electric vehicle charging stations, supporting fast and efficient power delivery. The DGD2103S8-13 incorporates advanced thermal monitoring that enhances system reliability in high-temperature environments. Its configurable drive strength allows optimization for different power device characteristics. The gate driver's comprehensive protection features include desaturation detection and soft shutdown capabilities. These characteristics make it particularly suitable for aerospace power distribution systems and satellite electronics. The DGD2103S8-13 also performs exceptionally in high-power ultrasound generators and medical imaging equipment. Its small footprint and high integration level enable compact power supply designs. The device supports multiple control interfaces for flexible system integration. With its combination of performance and protection features, the DGD2103S8-13 is an ideal solution for critical power management applications. Contact our sales team today to discuss your specific requirements and receive expert product recommendations. Submit your inquiry online for prompt technical support and pricing information.
General specs
- Product Status: Obsolete
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel MOSFET
- Voltage - Supply: 10V ~ 20V
- Logic Voltage - VIL, VIH: 0.8V, 2.5V
- Current - Peak Output (Source, Sink): 290mA, 600mA
- Input Type: Inverting, Non-Inverting
- High Side Voltage - Max (Bootstrap): 600 V
- Rise / Fall Time (Typ): 100ns, 35ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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