DDTC123ECAQ-7-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT23 T&R 3K
$0.04
Available to order
Reference Price (USD)
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$0.03974
500+
$0.0393426
1000+
$0.0389452
1500+
$0.0385478
2000+
$0.0381504
2500+
$0.037753
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DDTC123ECAQ-7-F
$0.04
Product details
The DDTC123ECAQ-7-F represents Diodes Incorporated's commitment to precision in pre-biased transistor technology. This BJT solution simplifies circuit prototyping with its internally set operating point, eliminating trim potentiometers in amplifier stages. Key attributes include low quiescent current for battery-powered devices, high noise immunity for RF applications, and symmetrical switching times for digital logic interfaces. Real-world implementations range from automotive lighting controls to renewable energy monitoring systems and building automation networks. Its gull-wing leads facilitate visual inspection during quality control processes. Elevate your design's reliability access technical resources and procurement options by inquiring about the DDTC123ECAQ-7-F today.
General specs
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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