1N5819HW1-7-F
Diodes Incorporated
Diodes Incorporated
DIODE SBR 40V 1A SOD123F
$0.52
Available to order
Reference Price (USD)
3,000+
$0.11200
6,000+
$0.10640
15,000+
$0.09800
30,000+
$0.09240
75,000+
$0.08960
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1N5819HW1-7-F
$0.52
Product details
Experience superior rectification performance with the 1N5819HW1-7-F single diode from Diodes Incorporated, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The 1N5819HW1-7-F performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the 1N5819HW1-7-F delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Super Barrier
- Voltage - DC Reverse (Vr) (Max): 40 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 510 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 15 ns
- Current - Reverse Leakage @ Vr: 500 µA @ 40 V
- Capacitance @ Vr, F: 30pF @ 10V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: SOD-123F
- Supplier Device Package: SOD-123F
- Operating Temperature - Junction: -55°C ~ 125°C
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