CDBJFSC5650-G
Comchip Technology
Comchip Technology
DIODE, SIC STKY 5A 650V TO-220F
$2.93
Available to order
Reference Price (USD)
1+
$2.98000
10+
$2.68800
50+
$2.40000
100+
$2.16000
250+
$1.92000
500+
$1.68000
1,000+
$1.39200
2,500+
$1.29600
5,000+
$1.24800
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| EMS | 3-7 days |
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CDBJFSC5650-G
$2.93
Product details
Experience superior rectification performance with the CDBJFSC5650-G single diode from Comchip Technology, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The CDBJFSC5650-G performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the CDBJFSC5650-G delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Capacitance @ Vr, F: 430pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Operating Temperature - Junction: -55°C ~ 175°C
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