CDBDSC5650-G
Comchip Technology
Comchip Technology
DIODE SIC 5A 650V TO-252/DPAK
$2.34
Available to order
Reference Price (USD)
1+
$2.14000
10+
$1.93200
80+
$1.72500
160+
$1.55250
320+
$1.38000
560+
$1.20750
1,040+
$1.00050
2,560+
$0.93150
5,040+
$0.89700
Exquisite packaging
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CDBDSC5650-G
$2.34
Product details
Comchip Technology's CDBDSC5650-G single rectifier diode delivers exceptional performance in a compact, reliable package. This component is designed for efficient power rectification with minimal energy loss, featuring advanced semiconductor materials for optimal thermal management. The diode exhibits excellent forward conduction characteristics and reliable reverse blocking capability, making it suitable for diverse electronic systems. Its fast recovery time ensures efficient operation in high-frequency switching applications. Primary uses include telecommunications infrastructure, server power supplies, and medical imaging equipment. The CDBDSC5650-G also performs well in harsh environment applications such as downhole drilling instrumentation. Key features include superior surge current tolerance and stable operation across temperature variations. Engineers will appreciate its consistent performance in precision power conversion tasks. For technical specifications and purchasing options, contact our expert team to discuss your application requirements.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 21.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 650 V
- Capacitance @ Vr, F: 424pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: DPAK
- Operating Temperature - Junction: -55°C ~ 175°C
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