CDBD2SC21200-G
Comchip Technology
Comchip Technology
DIODE SIC 2A 1200V TO-263/D2PAK
$3.17
Available to order
Reference Price (USD)
1+
$2.91000
10+
$2.60000
50+
$2.34000
100+
$2.13200
250+
$1.92400
500+
$1.72640
1,000+
$1.45600
2,500+
$1.38320
5,000+
$1.33120
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CDBD2SC21200-G
$3.17
Product details
The CDBD2SC21200-G from Comchip Technology represents a breakthrough in single rectifier diode technology, offering unmatched performance in power conversion applications. This diode features an innovative design that minimizes switching losses while maximizing current handling capacity. Its precision-engineered junction provides stable characteristics under varying load conditions, ensuring reliable operation in demanding environments. The CDBD2SC21200-G is particularly effective in high-voltage applications such as X-ray generators and electrostatic precipitators. Industrial automation systems benefit from its fast response times and consistent performance. Other key applications include railway traction systems, mining equipment, and oil field instrumentation. The diode's rugged construction meets military-grade specifications for shock and vibration resistance. With its combination of high efficiency and durability, the CDBD2SC21200-G is an excellent choice for critical power electronics. Request a sample today to experience its superior performance in your application.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 6.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
- Capacitance @ Vr, F: 136pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D²Pak)
- Operating Temperature - Junction: -55°C ~ 175°C
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