Shopping cart

Subtotal: $0.00

SSP1N60A

Fairchild Semiconductor
SSP1N60A Preview
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.10
Available to order
Reference Price (USD)
1+
$0.10000
500+
$0.099
1000+
$0.098
1500+
$0.097
2000+
$0.096
2500+
$0.095
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Fairchild Semiconductor SSP1N60A is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
SSP1N60A

SSP1N60A

$0.10

Product details

Fairchild Semiconductor presents the SSP1N60A, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The SSP1N60A offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The SSP1N60A also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3

Viewed products

Infineon Technologies

BTS112A

$0.00 (not set)
Diodes Incorporated

DMP4065SQ-13

$0.00 (not set)
Harris Corporation

HUF75337P3

$0.00 (not set)
onsemi

MTP8N50E

$0.00 (not set)
Fairchild Semiconductor

HUF75332S3ST

$0.00 (not set)
Vishay Siliconix

SQJ415EP-T1_GE3

$0.00 (not set)
Infineon Technologies

IPB80N08S2L07ATMA1

$0.00 (not set)
Vishay Siliconix

SUP90100E-GE3

$0.00 (not set)
Renesas Electronics America Inc

FS30AS-2-T13#B00

$0.00 (not set)
onsemi

NTP6412ANG

$0.00 (not set)
Top