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RF1S70N03

Harris Corporation
RF1S70N03 Preview
Harris Corporation
MOSFET N-CH 30V 70A TO262AA
$1.48
Available to order
Reference Price (USD)
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$1.4504
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$1.4356
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$1.4208
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$1.406
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RF1S70N03

RF1S70N03

$1.48

Product details

Elevate your electronic designs with the RF1S70N03 single MOSFET transistor from Harris Corporation, a premium offering in the Discrete Semiconductor Products market (Transistors - FETs, MOSFETs - Single). This high-performance component delivers exceptional power handling capabilities combined with efficient switching characteristics. The RF1S70N03 features advanced semiconductor architecture that ensures minimal energy loss and optimal thermal management. Its design incorporates protective features that enhance reliability in demanding operating conditions. The MOSFET demonstrates excellent performance in automotive electronics, particularly in engine control units, lighting systems, and battery management solutions. Industrial applications include motor drives, power tools, and factory automation equipment. For renewable energy systems, it's particularly effective in wind power converters and solar tracking mechanisms. The component also finds significant use in high-end computing applications and data storage systems. With its combination of power efficiency and robust construction, the RF1S70N03 provides design engineers with a versatile solution for various power management challenges. To discover how this MOSFET can benefit your specific application, we encourage you to submit an online inquiry. Our knowledgeable staff will provide detailed product information and purchasing options to meet your project requirements and timeline.

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262AA
  • Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA

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