RF1S50N06LESM
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.90
Available to order
Reference Price (USD)
1+
$0.90000
500+
$0.891
1000+
$0.882
1500+
$0.873
2000+
$0.864
2500+
$0.855
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
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RF1S50N06LESM
$0.90
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 22mOhm @ 50A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±10V
- Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 142W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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