MRF6S19060NBR1
Freescale Semiconductor
Freescale Semiconductor
RF POWER N-CHANNEL, MOSFET
$44.06
Available to order
Reference Price (USD)
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$44.06000
500+
$43.6194
1000+
$43.1788
1500+
$42.7382
2000+
$42.2976
2500+
$41.857
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MRF6S19060NBR1
$44.06
Product details
Optimize your RF applications with the MRF6S19060NBR1 RF MOSFET transistor from Freescale Semiconductor, a leader in discrete semiconductor products. This high-frequency transistor is designed for superior amplification and signal fidelity. Its advanced FET technology ensures minimal noise and maximum efficiency. The MRF6S19060NBR1 handles high power levels with excellent thermal stability. With high gain and linearity, it is perfect for demanding RF circuits. The transistor's robust design guarantees durability in tough conditions. Its compact size enables seamless integration into diverse electronic layouts. The MRF6S19060NBR1 is ideal for systems requiring reliable and efficient RF performance. Key benefits include fast switching, low signal loss, and high impedance matching. These features make it suitable for use in 5G infrastructure, aerospace communication, and military electronics. It is also effective in consumer gadgets, automotive telematics, and industrial monitoring systems. The MRF6S19060NBR1 ensures consistent operation across various frequencies. Freescale Semiconductor has engineered this MOSFET to exceed industry expectations. For cutting-edge RF technology, the MRF6S19060NBR1 is an excellent selection. Improve your designs with this high-quality transistor. Request a quote or submit an inquiry online now. Depend on the MRF6S19060NBR1 from Freescale Semiconductor for superior RF solutions.
General specs
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.93GHz
- Gain: 16dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 610 mA
- Power - Output: 12W
- Voltage - Rated: 68 V
- Package / Case: TO-272BB
- Supplier Device Package: TO-272 WB-4
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