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IRFD113

Harris Corporation
IRFD113 Preview
Harris Corporation
MOSFET N-CH 60V 800MA 4DIP
$0.63
Available to order
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$0.6111
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$0.6048
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$0.5985
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Harris Corporation IRFD113 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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IRFD113

IRFD113

$0.63

Product details

Enhance your electronic designs with the IRFD113 single MOSFET transistor from Harris Corporation, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The IRFD113 features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the IRFD113 particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the IRFD113 represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 800mOhm @ 800mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 4-HVMDIP
  • Package / Case: 4-DIP (0.300", 7.62mm)

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