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HYB18T1G800BF-3S

Qimonda
HYB18T1G800BF-3S Preview
Qimonda
IC SDRAM 1GBIT 333MHZ 68BGA
$35.10
Available to order
Reference Price (USD)
1+
$35.10000
500+
$34.749
1000+
$34.398
1500+
$34.047
2000+
$33.696
2500+
$33.345
Exquisite packaging
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Qimonda HYB18T1G800BF-3S is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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HYB18T1G800BF-3S

HYB18T1G800BF-3S

$35.10

Product details

The HYB18T1G800BF-3S by Qimonda represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers. Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The HYB18T1G800BF-3S demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades. This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The HYB18T1G800BF-3S also serves well in advanced medical imaging equipment and scientific instrumentation. To explore how this Qimonda memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the HYB18T1G800BF-3S memory solution.

General specs

  • Product Status: Discontinued at Digi-Key
  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 68-TFBGA
  • Supplier Device Package: -

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