Shopping cart

Subtotal: $0.00

HUF75329P3

Harris Corporation
HUF75329P3 Preview
Harris Corporation
MOSFET N-CH 55V 49A TO220-3
$0.59
Available to order
Reference Price (USD)
1+
$0.59000
500+
$0.5841
1000+
$0.5782
1500+
$0.5723
2000+
$0.5664
2500+
$0.5605
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Harris Corporation HUF75329P3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
HUF75329P3

HUF75329P3

$0.59

Product details

Harris Corporation's HUF75329P3 stands out in the Discrete Semiconductor Products market as a top-tier single MOSFET transistor in the Transistors - FETs, MOSFETs - Single segment. This component combines cutting-edge semiconductor technology with practical design features for superior electrical performance. The HUF75329P3 demonstrates exceptional characteristics including low gate charge, excellent switching behavior, and reliable overcurrent protection. These features translate to reduced power losses and extended device lifespan in your applications. The transistor's robust construction ensures stable operation in challenging environmental conditions, from temperature extremes to mechanical stress. Industrial engineers will appreciate its versatility in robotics control systems, welding equipment, and power tool applications. For consumer electronics, it's perfect for high-end audio systems, gaming consoles, and smart home devices. The HUF75329P3 also performs exceptionally in renewable energy applications such as solar inverters and wind turbine controls. With its balanced performance metrics, this MOSFET provides the ideal solution for your power management needs. Ready to incorporate this high-quality component into your designs? Submit your inquiry through our user-friendly online platform for quick response and competitive pricing options.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55 V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 24mOhm @ 49A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 20 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 128W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Viewed products

Infineon Technologies

IPB80N04S404ATMA1

$0.00 (not set)
IXYS

IXFK250N10P

$0.00 (not set)
onsemi

NTHL040N65S3HF

$0.00 (not set)
Vishay Siliconix

IRFR9110TRPBF

$0.00 (not set)
Panjit International Inc.

PJQ4443P-AU_R2_000A1

$0.00 (not set)
Rohm Semiconductor

RMW130N03TB

$0.00 (not set)
Fairchild Semiconductor

SFM9110TF

$0.00 (not set)
Infineon Technologies

IPP60R170CFD7XKSA1

$0.00 (not set)
Infineon Technologies

IRFS4321TRL7PP

$0.00 (not set)
GeneSiC Semiconductor

G3R75MT12J

$0.00 (not set)
Top