HM3-6551B-9
Harris Corporation
Harris Corporation
256 X 4 CMOS RAM
$6.30
Available to order
Reference Price (USD)
1+
$6.30000
500+
$6.237
1000+
$6.174
1500+
$6.111
2000+
$6.048
2500+
$5.985
Exquisite packaging
Discount
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| TNT | 2-6 days |
| EMS | 3-7 days |
Harris Corporation HM3-6551B-9 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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HM3-6551B-9
$6.30
Product details
The HM3-6551B-9 by Harris Corporation represents the next generation of memory IC technology, offering unparalleled performance for data-intensive applications. This memory solution combines high density with rapid access capabilities, providing system designers with flexible options for various architectural requirements. Its advanced interface ensures compatibility with modern processors and controllers.
Notable features include enhanced security protocols to protect sensitive data, multi-level cell technology for efficient storage, and adaptive power management for energy-sensitive applications. The HM3-6551B-9 demonstrates exceptional endurance characteristics, making it suitable for applications with frequent read/write cycles. Its architecture supports seamless scaling for future system upgrades.
This memory IC finds perfect application in AI accelerator cards, high-performance computing clusters, and data center storage arrays. It's equally effective in automotive ADAS systems, 5G network infrastructure, and industrial robotics requiring real-time data processing. The HM3-6551B-9 also serves well in advanced medical imaging equipment and scientific instrumentation.
To explore how this Harris Corporation memory IC can optimize your design, submit your inquiry through our digital platform. We offer comprehensive support from technical consultation to volume pricing for the HM3-6551B-9 memory solution.
General specs
- Product Status: Active
- Memory Type: Volatile
- Memory Format: SRAM
- Technology: SRAM - Asynchronous
- Memory Size: 1Kb (256 x 4)
- Memory Interface: Parallel
- Clock Frequency: -
- Write Cycle Time - Word, Page: 400ns
- Access Time: 220 ns
- Voltage - Supply: 4.5V ~ 5.5V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Through Hole
- Package / Case: 22-DIP (0.400", 10.16mm)
- Supplier Device Package: 22-PDIP
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