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HM1-6518B-9

Harris Corporation
HM1-6518B-9 Preview
Harris Corporation
1024 X 1 CMOS RAM
$14.14
Available to order
Reference Price (USD)
1+
$14.14000
500+
$13.9986
1000+
$13.8572
1500+
$13.7158
2000+
$13.5744
2500+
$13.433
Exquisite packaging
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Harris Corporation HM1-6518B-9 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

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HM1-6518B-9

HM1-6518B-9

$14.14

Product details

Discover the HM1-6518B-9 by Harris Corporation, a high-efficiency memory IC engineered for next-generation computing platforms. This innovative solution delivers superior performance metrics, combining speed, capacity, and power optimization in a single package. Its architecture is tailored for both embedded and expandable memory applications. The HM1-6518B-9 features include dynamic frequency scaling, bank interleaving support, and thermal throttling capability. These advanced features enable optimal performance across various operating conditions. The memory IC offers excellent signal integrity at high speeds while maintaining low power consumption. Its design incorporates reliability enhancements for continuous operation. Ideal applications include hyperscale data centers, AI inference accelerators, and autonomous mobile robots. The HM1-6518B-9 is equally effective in virtual reality systems, genomic sequencing equipment, and quantum computing interfaces. Its capabilities extend to smart agriculture systems and renewable energy management platforms requiring high-performance memory solutions. To learn more about integrating this Harris Corporation memory IC into your design, submit your inquiry through our online portal. Our application engineers will provide technical support and procurement options for the HM1-6518B-9, ensuring optimal memory performance for your specific requirements.

General specs

  • Product Status: Active
  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Kb (1K x 1)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 280ns
  • Access Time: 180 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 18-DIP (0.300", 7.62mm)
  • Supplier Device Package: 18-CERDIP

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