HGT1S3N60A4DS9A
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$1.66
Available to order
Reference Price (USD)
1+
$1.66000
500+
$1.6434
1000+
$1.6268
1500+
$1.6102
2000+
$1.5936
2500+
$1.577
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HGT1S3N60A4DS9A
$1.66
Product details
The HGT1S3N60A4DS9A from Fairchild Semiconductor is a high-performance single IGBT transistor designed for efficient power switching. This discrete semiconductor product is widely used in UPS systems, induction heating, and electric vehicle applications. With its low saturation voltage and excellent thermal management, the HGT1S3N60A4DS9A ensures minimal energy loss and maximum reliability. Its compact design and easy integration make it a versatile choice for various power electronics projects. Engineers will find its high current handling and fast switching capabilities invaluable. Discover the potential of the HGT1S3N60A4DS9A for your applications request a quote today.
General specs
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 17 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A
- Power - Max: 70 W
- Switching Energy: 37µJ (on), 25µJ (off)
- Input Type: Standard
- Gate Charge: 21 nC
- Td (on/off) @ 25°C: 6ns/73ns
- Test Condition: 390V, 3A, 50Ohm, 15V
- Reverse Recovery Time (trr): 29 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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