HGT1S14N41G3VLT
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$1.77
Available to order
Reference Price (USD)
1+
$1.77000
500+
$1.7523
1000+
$1.7346
1500+
$1.7169
2000+
$1.6992
2500+
$1.6815
Exquisite packaging
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HGT1S14N41G3VLT
$1.77
Product details
Upgrade your electronic designs with the HGT1S14N41G3VLT, a high-reliability Bipolar Junction Transistor from Fairchild Semiconductor. This single BJT in the Discrete Semiconductor Products range offers exceptional linear amplification characteristics for precision analog circuits. The device features low harmonic distortion and excellent phase response, making it ideal for audio and instrumentation applications. Its robust construction withstands electrical stress and thermal cycling without performance degradation. The HGT1S14N41G3VLT demonstrates consistent current gain across its operating range, simplifying circuit stabilization. Common uses include microphone preamplifiers, medical monitoring equipment, and precision voltage references. Broadcast systems, laboratory instruments, and high-end audio components benefit from this transistor's clean signal reproduction. Fairchild Semiconductor subjects each HGT1S14N41G3VLT unit to comprehensive electrical testing before shipment. The transistor's lead frame design optimizes thermal dissipation in high-duty-cycle applications. With its combination of technical excellence and manufacturing quality, the HGT1S14N41G3VLT delivers outstanding value. Contact our sales team through the website inquiry form to discuss your specific requirements and procurement options.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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