HGT1S12N60A4DS
Fairchild Semiconductor
Fairchild Semiconductor
IGBT, 54A, 600V, N-CHANNEL, TO-2
$3.43
Available to order
Reference Price (USD)
800+
$3.44018
Exquisite packaging
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HGT1S12N60A4DS
$3.43
Product details
Experience unparalleled power control with the HGT1S12N60A4DS single IGBT transistor by Fairchild Semiconductor. This high-efficiency component is perfect for applications in industrial automation, renewable energy, and automotive systems. The HGT1S12N60A4DS boasts low energy loss and high switching frequency, making it a top choice for modern power electronics. Its robust design ensures long-term reliability even under high stress and temperature variations. Whether you're designing for high-power or compact systems, the HGT1S12N60A4DS offers the flexibility and performance you need. Submit your inquiry online to learn more about this advanced IGBT transistor.
General specs
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 54 A
- Current - Collector Pulsed (Icm): 96 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
- Power - Max: 167 W
- Switching Energy: 55µJ (on), 50µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 17ns/96ns
- Test Condition: 390V, 12A, 10Ohm, 15V
- Reverse Recovery Time (trr): 30 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB
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