G5S6504Z
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 4A DFN5*
$3.41
Available to order
Reference Price (USD)
1+
$3.41000
500+
$3.3759
1000+
$3.3418
1500+
$3.3077
2000+
$3.2736
2500+
$3.2395
Exquisite packaging
Discount
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| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Global Power Technology-GPT G5S6504Z is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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G5S6504Z
$3.41
Product details
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 15.45A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 4 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 181pF @ 0V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
- Operating Temperature - Junction: -55°C ~ 175°C
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