G5S12020BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 3-P
$23.23
Available to order
Reference Price (USD)
1+
$23.23000
500+
$22.9977
1000+
$22.7654
1500+
$22.5331
2000+
$22.3008
2500+
$22.0685
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G5S12020BM
$23.23
Product details
The G5S12020BM from Global Power Technology-GPT is a high-performance rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable current rectification with minimal energy loss. Ideal for both industrial and consumer electronics, it offers robust performance in demanding environments. The G5S12020BM features low forward voltage drop and high surge current capability, making it suitable for a wide range of power supply designs. Its compact form factor and excellent thermal characteristics ensure long-term reliability. Common applications include power adapters, battery chargers, and LED lighting systems. For automotive use, it enhances the efficiency of alternator rectifiers and voltage regulators. In renewable energy systems, this diode is perfect for solar panel inverters and wind turbine controllers. Upgrade your designs with the G5S12020BM and experience superior rectification performance. Contact us today for pricing and availability.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 33A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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