G5S12016BM
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 16A 3-P
$15.25
Available to order
Reference Price (USD)
1+
$15.25000
500+
$15.0975
1000+
$14.945
1500+
$14.7925
2000+
$14.64
2500+
$14.4875
Exquisite packaging
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G5S12016BM
$15.25
Product details
Optimize your power management systems with the G5S12016BM rectifier diode from Global Power Technology-GPT, a standout in the Diodes - Rectifiers - Arrays category. This diode excels in high-frequency applications, offering fast recovery times and low power dissipation. Its rugged design ensures durability in harsh environments, making it suitable for military and aerospace applications. The G5S12016BM is also widely used in medical devices, where precision and reliability are paramount. In industrial settings, it enhances the performance of CNC machines and servo drives. For consumer electronics, this diode is a popular choice for laptops, tablets, and smartphones. Its versatility extends to renewable energy systems, where it improves the efficiency of micro-inverters and power optimizers. Upgrade to the G5S12016BM and experience top-tier rectification technology. Request a sample or place your order today to see the difference for yourself.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 27.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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