G5S06510AT
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 650V 10A 2-PI
$6.73
Available to order
Reference Price (USD)
1+
$6.73000
500+
$6.6627
1000+
$6.5954
1500+
$6.5281
2000+
$6.4608
2500+
$6.3935
Exquisite packaging
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| EMS | 3-7 days |
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G5S06510AT
$6.73
Product details
Experience superior rectification performance with the G5S06510AT single diode from Global Power Technology-GPT, engineered for excellence in power electronics. This component offers an optimal balance between forward voltage characteristics and reverse leakage current, ensuring efficient energy conversion. The diode's advanced construction provides excellent thermal stability and long-term reliability in continuous operation. Designers will appreciate its versatility in applications ranging from consumer appliances to industrial power systems. The G5S06510AT performs exceptionally well in UPS systems, electric vehicle power trains, and renewable energy converters. Its robust design withstands electrical transients and mechanical stress, making it ideal for transportation and infrastructure applications. Additional benefits include consistent batch-to-batch performance and compatibility with automated assembly processes. For engineers seeking a reliable rectification solution, the G5S06510AT delivers outstanding results. Contact us today to learn more about this high-performance diode and its applications.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 36A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 650 V
- Capacitance @ Vr, F: 645pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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