G3S12040B
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 40A 3-P
$49.60
Available to order
Reference Price (USD)
1+
$49.60000
500+
$49.104
1000+
$48.608
1500+
$48.112
2000+
$47.616
2500+
$47.12
Exquisite packaging
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| EMS | 3-7 days |
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G3S12040B
$49.60
Product details
The G3S12040B from Global Power Technology-GPT is a high-efficiency rectifier diode array designed for compact and high-power applications. Part of the Discrete Semiconductor Products family, this array integrates multiple diodes to streamline your PCB design. Its superior thermal management ensures reliable performance in industrial motor drives and power supplies. The G3S12040B is also ideal for use in telecommunications equipment, providing stable power conversion for network infrastructure. In renewable energy systems, it enhances the efficiency of solar and wind power inverters. Automotive applications include hybrid and electric vehicle powertrains. With its high isolation voltage and low leakage current, the G3S12040B is a dependable solution for critical power management tasks. Trust Global Power Technology-GPT for high-quality diode arrays that meet your technical specifications. Get in touch with us today for pricing and delivery options.
General specs
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io) (per Diode): 64.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
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