G3S12020A
Global Power Technology-GPT
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 20A 2-P
$32.25
Available to order
Reference Price (USD)
1+
$32.25000
500+
$31.9275
1000+
$31.605
1500+
$31.2825
2000+
$30.96
2500+
$30.6375
Exquisite packaging
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| EMS | 3-7 days |
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G3S12020A
$32.25
Product details
The G3S12020A from Global Power Technology-GPT is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. This diode ensures reliable operation with its robust construction and advanced semiconductor technology. Ideal for both industrial and consumer electronics, the G3S12020A offers excellent forward voltage characteristics and low reverse leakage current, making it a versatile choice for designers. Its compact form factor allows for easy integration into space-constrained designs. Whether you're working on power supplies, battery chargers, or signal demodulation circuits, this diode delivers consistent performance. Key features include fast switching capabilities, high surge current tolerance, and superior thermal management. Common applications include automotive systems, renewable energy inverters, and telecommunications equipment. For pricing and availability, submit an inquiry today to find the perfect solution for your project needs.
General specs
- Product Status: Active
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200 V
- Current - Average Rectified (Io): 73A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 120 A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0 ns
- Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
- Capacitance @ Vr, F: 2600pF @ 0V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 175°C
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