Shopping cart

Subtotal: $0.00

G3S12003H

Global Power Technology-GPT
G3S12003H Preview
Global Power Technology-GPT
SIC SCHOTTKY DIODE 1200V 3A 2-PI
$4.87
Available to order
Reference Price (USD)
1+
$4.87000
500+
$4.8213
1000+
$4.7726
1500+
$4.7239
2000+
$4.6752
2500+
$4.6265
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Global Power Technology-GPT G3S12003H is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
G3S12003H

G3S12003H

$4.87

Product details

Discover the versatility of Global Power Technology-GPT's G3S12003H single rectifier diode, engineered for precision power control in modern electronics. This component delivers efficient AC to DC conversion with minimal energy loss, thanks to its advanced semiconductor technology. The diode features excellent forward bias characteristics and reliable reverse voltage protection, ensuring stable operation in diverse circuit configurations. Its compact package design facilitates easy PCB integration while maintaining superior thermal properties. Common applications include solar power systems, uninterruptible power supplies, and audio amplification equipment. The G3S12003H performs exceptionally well in high-temperature environments, making it suitable for automotive under-hood applications. Other notable features include fast response times and consistent performance under varying load conditions. Electrical engineers will appreciate its reliability in critical power management tasks. To explore how this diode can enhance your designs, request product specifications and pricing information today.

General specs

  • Product Status: Active
  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
  • Capacitance @ Vr, F: 260pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F
  • Operating Temperature - Junction: -55°C ~ 175°C

Viewed products

Yangzhou Yangjie Electronic Technology Co.,Ltd

RB751V-40-F2-0000HF

$0.00 (not set)
Nexperia USA Inc.

PMEG150G30ELP-QX

$0.00 (not set)
Taiwan Semiconductor Corporation

MUR320SBH

$0.00 (not set)
Micro Commercial Co

SK16-LTP

$0.00 (not set)
Micro Commercial Co

HER202G-TP

$0.00 (not set)
Nexperia USA Inc.

BAS16GWX

$0.00 (not set)
Rohm Semiconductor

RBR1VWM30ATFTR

$0.00 (not set)
Infineon Technologies

IDDD20G65C6XTMA1

$0.00 (not set)
Microchip Technology

JANS1N5807US/TR

$0.00 (not set)
Diotec Semiconductor

PT800K

$0.00 (not set)
Top