Shopping cart

Subtotal: $0.00

FQU2N50BTU

Fairchild Semiconductor
FQU2N50BTU Preview
Fairchild Semiconductor
MOSFET N-CH 500V 1.6A IPAK
$0.37
Available to order
Reference Price (USD)
1+
$0.37000
500+
$0.3663
1000+
$0.3626
1500+
$0.3589
2000+
$0.3552
2500+
$0.3515
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Fairchild Semiconductor FQU2N50BTU is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FQU2N50BTU

FQU2N50BTU

$0.37

Product details

Fairchild Semiconductor presents the FQU2N50BTU, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The FQU2N50BTU offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The FQU2N50BTU also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 5.3Ohm @ 800mA, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Viewed products

Infineon Technologies

BSC097N06NSATMA1

$0.00 (not set)
Nexperia USA Inc.

BUK7M4R3-40HX

$0.00 (not set)
Sanken

2SK3003

$0.00 (not set)
Infineon Technologies

IPD90P04P405ATMA1

$0.00 (not set)
Fairchild Semiconductor

FQPF8N60CYDTU

$0.00 (not set)
Sanyo

2SK1449

$0.00 (not set)
onsemi

FDP3632

$0.00 (not set)
Rohm Semiconductor

RV4E031RPHZGTCR1

$0.00 (not set)
Diodes Incorporated

DMN6075S-7

$0.00 (not set)
Fairchild Semiconductor

HUFA75332S3ST

$0.00 (not set)
Top