Shopping cart

Subtotal: $0.00

FQE10N20CTU

Fairchild Semiconductor
FQE10N20CTU Preview
Fairchild Semiconductor
MOSFET N-CH 200V 4A TO126-3
$0.24
Available to order
Reference Price (USD)
1+
$0.24000
500+
$0.2376
1000+
$0.2352
1500+
$0.2328
2000+
$0.2304
2500+
$0.228
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

DHL / Fedex / UPS 2-5 days
TNT 2-6 days
EMS 3-7 days

Fairchild Semiconductor FQE10N20CTU is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.

Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FQE10N20CTU

FQE10N20CTU

$0.24

Product details

Enhance your electronic designs with the FQE10N20CTU single MOSFET transistor from Fairchild Semiconductor, a premium Discrete Semiconductor Product in the Transistors - FETs, MOSFETs - Single classification. This power-efficient component excels in switching applications, delivering robust performance with minimal energy loss. The FQE10N20CTU features an optimized gate drive characteristic that ensures smooth operation across various voltage ranges. Its compact design doesn't compromise on power handling capabilities, making it suitable for space-constrained applications. Notable advantages include superior noise immunity, stable operation under varying load conditions, and enhanced electrostatic discharge protection. These qualities make the FQE10N20CTU particularly valuable for medical equipment, telecommunications infrastructure, and aerospace electronics. Implement this MOSFET in your next project involving DC-DC converters, load switches, or power distribution systems. The component's reliability and efficiency will significantly improve your system's overall performance. For engineers seeking quality MOSFET solutions, the FQE10N20CTU represents an excellent choice. Visit our website to request a quote or submit your inquiry directly through our online portal for prompt assistance.

General specs

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 360mOhm @ 2A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 12.8W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-126-3
  • Package / Case: TO-225AA, TO-126-3

Viewed products

Vishay Siliconix

IRLL014TRPBF

$0.00 (not set)
NXP USA Inc.

PMF780SN,115

$0.00 (not set)
Diodes Incorporated

DMN2300UFB-7B

$0.00 (not set)
EPC

EPC2021

$0.00 (not set)
STMicroelectronics

STF8N80K5

$0.00 (not set)
Toshiba Semiconductor and Storage

SSM3K15AFS,LF

$0.00 (not set)
IXYS

IXTP8N65X2M

$0.00 (not set)
Rectron USA

RM35P30LDV

$0.00 (not set)
onsemi

NVTFS4C06NTAG

$0.00 (not set)
Central Semiconductor Corp

CXDM1002N TR PBFREE

$0.00 (not set)
Top