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FQB34N20TM

Fairchild Semiconductor
FQB34N20TM Preview
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$2.51
Available to order
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FQB34N20TM

FQB34N20TM

$2.51

Product details

General specs

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 15.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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