FQB14N30TM
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 300V 14.4A D2PAK
$1.60
Available to order
Reference Price (USD)
1+
$1.60000
500+
$1.584
1000+
$1.568
1500+
$1.552
2000+
$1.536
2500+
$1.52
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Fairchild Semiconductor FQB14N30TM is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
FQB14N30TM
$1.60
Product details
Fairchild Semiconductor presents the FQB14N30TM, a high-efficiency single MOSFET transistor that excels in the Discrete Semiconductor Products category (Transistors - FETs, MOSFETs - Single). This component combines innovative semiconductor technology with practical design features to deliver superior performance in power management applications. The FQB14N30TM offers significant advantages including optimized switching behavior, reduced conduction losses, and enhanced thermal performance. These characteristics translate to improved system efficiency and reliability in your electronic designs. The MOSFET is particularly effective in medical imaging equipment, laboratory instrumentation, and diagnostic devices where precision power control is essential. Industrial applications benefit from its use in CNC machinery, packaging systems, and material handling equipment. For the energy sector, it's ideal for smart grid components and power monitoring systems. The FQB14N30TM also performs exceptionally in professional lighting systems and advanced HVAC controls. With its robust construction and electrical efficiency, this component provides design engineers with a reliable solution for diverse power switching requirements. Interested in incorporating this high-performance MOSFET into your designs? Submit your inquiry through our online platform to receive comprehensive product details, technical support, and competitive pricing information from our expert team.
General specs
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 290mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 3.13W (Ta), 147W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Viewed products
