FDI038AN06A0_NL
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$3.52
Available to order
Reference Price (USD)
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$3.52000
500+
$3.4848
1000+
$3.4496
1500+
$3.4144
2000+
$3.3792
2500+
$3.344
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FDI038AN06A0_NL
$3.52
Product details
General specs
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I2PAK (TO-262)
- Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
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