CA3250F
Harris Corporation
Harris Corporation
NPN TRANSISTOR ARRAY
$0.84
Available to order
Reference Price (USD)
1+
$0.84000
500+
$0.8316
1000+
$0.8232
1500+
$0.8148
2000+
$0.8064
2500+
$0.798
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
| DHL / Fedex / UPS | 2-5 days |
| TNT | 2-6 days |
| EMS | 3-7 days |
Harris Corporation CA3250F is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
Experience hassle-free transactions with our flexible payment options and credit facilities. Learn more about the various payment methods accepted, installment plans, and any exclusive credit offers available to make your shopping experience seamless.
CA3250F
$0.84
Product details
The CA3250F from Harris Corporation delivers exceptional performance in the Bipolar Junction Transistor (BJT) Arrays segment of Discrete Semiconductor Products. This sophisticated component combines multiple transistors with closely matched parameters for coordinated circuit operation. Engineered for reliability, it offers superior current amplification and thermal characteristics. The CA3250F features minimal variation in key parameters across all transistors. Its robust design ensures stable operation in demanding electrical environments. With its low collector-emitter saturation voltage, it maximizes system efficiency. The product demonstrates excellent switching speed for high-performance applications. Industrial automation systems benefit from its precise control capabilities. Telecommunications equipment utilizes its stable amplification characteristics. Power management solutions employ it for efficient energy conversion. The CA3250F also finds use in advanced computing applications. Harris Corporation has incorporated quality-focused manufacturing processes throughout production. The component's design supports effective heat dissipation in continuous operation. Its construction meets international environmental and safety standards. Engineers appreciate its consistent performance across different production batches. The CA3250F offers design flexibility for various electronic system requirements. Its compatibility with automated assembly processes simplifies manufacturing integration. Discover how this BJT Array can enhance your project by contacting our technical sales team today.
General specs
- Product Status: Active
- Transistor Type: 8 NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 16V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 10µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 3V
- Power - Max: 750mW
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Through Hole
- Package / Case: 18-CDIP (0.300", 7.62mm)
- Supplier Device Package: 18-CERDIP
Viewed products