CA3082F/3
Harris Corporation
Harris Corporation
GEN PURP NPN TRANSISTOR ARRAYS
$6.85
Available to order
Reference Price (USD)
1+
$6.85000
500+
$6.7815
1000+
$6.713
1500+
$6.6445
2000+
$6.576
2500+
$6.5075
Exquisite packaging
Discount
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Harris Corporation CA3082F/3 is available at inksontech.com. We only sale New&Original Part and offer 1 year warranty time. If you would like to know more about the products or apply more better price, please send a quote to us or contact us by email.
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Product details
Enhance your electronic designs with the CA3082F/3 BJT Array from Harris Corporation, a top-tier solution in the Discrete Semiconductor Products range. This transistor array is engineered for applications requiring multiple bipolar transistors with matched characteristics. The CA3082F/3 excels in providing uniform performance across all transistors, ensuring balanced operation in complex circuits. Its low leakage current and high gain make it ideal for precision tasks. The product's design focuses on minimizing power consumption while maximizing output efficiency. With superior thermal management, it operates reliably under continuous load. The CA3082F/3 is perfect for creating compact, high-density circuit layouts. Engineers appreciate its consistent parameters across production batches for design stability. This BJT Array finds applications in medical instrumentation for accurate signal processing. Telecommunications equipment utilizes its fast switching for clear signal transmission. Renewable energy systems employ it for efficient power conversion processes. For robotics and automation, it offers precise control over motor functions. The CA3082F/3 stands as a testament to Harris Corporation's commitment to quality semiconductor solutions. Its compatibility with surface-mount technology simplifies assembly processes. Choose this reliable component for projects demanding high performance and durability. Contact us through our online portal to request a quote for the CA3082F/3 and elevate your electronic designs.
General specs
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -