2N3904RM
Fairchild Semiconductor

Fairchild Semiconductor
SMALL SIGNAL BIPOLAR TRANSISTOR
$0.02
Available to order
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$0.0198
1000+
$0.0196
1500+
$0.0194
2000+
$0.0192
2500+
$0.019
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Product details
Enhance your electronic designs with the 2N3904RM BJT Array from Fairchild Semiconductor, a top-tier solution in the Discrete Semiconductor Products range. This transistor array is engineered for applications requiring multiple bipolar transistors with matched characteristics. The 2N3904RM excels in providing uniform performance across all transistors, ensuring balanced operation in complex circuits. Its low leakage current and high gain make it ideal for precision tasks. The product's design focuses on minimizing power consumption while maximizing output efficiency. With superior thermal management, it operates reliably under continuous load. The 2N3904RM is perfect for creating compact, high-density circuit layouts. Engineers appreciate its consistent parameters across production batches for design stability. This BJT Array finds applications in medical instrumentation for accurate signal processing. Telecommunications equipment utilizes its fast switching for clear signal transmission. Renewable energy systems employ it for efficient power conversion processes. For robotics and automation, it offers precise control over motor functions. The 2N3904RM stands as a testament to Fairchild Semiconductor's commitment to quality semiconductor solutions. Its compatibility with surface-mount technology simplifies assembly processes. Choose this reliable component for projects demanding high performance and durability. Contact us through our online portal to request a quote for the 2N3904RM and elevate your electronic designs.
General specs
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 40V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
- Power - Max: 625mW
- Frequency - Transition: 300MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package: TO-92